Narrow Gap II-VI Compounds for Optoelectronic and

by Peter Capper

Publisher: Springer

Written in English
Cover of: Narrow Gap II-VI Compounds for Optoelectronic and | Peter Capper
Published: Pages: 592 Downloads: 988
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Subjects:

  • Semi-conductors & super-conductors,
  • Applied Electromagnetics,
  • Optoelectronic Devices,
  • Technology,
  • Technology & Industrial Arts,
  • Science/Mathematics,
  • Material Science,
  • Optics,
  • Electromagnetic devices,
  • Narrow gap semiconductors,
  • Technology / Optics,
  • Technology : Material Science,
  • Electronics - Optoelectronics
  • Edition Notes

    SeriesElectronic Materials Series
    The Physical Object
    FormatHardcover
    Number of Pages592
    ID Numbers
    Open LibraryOL9386617M
    ISBN 100412715600
    ISBN 109780412715600

  The Springer Handbook of Electronic and Photonic Materials, second edition, includes practical applications used as examples, details of experimental techniques, useful tables that summarize equations, and, most importantly, properties of various materials, as well as an extensive : Safa Kasap.   SEMICONDUCTOR DEVICES: MODELLING AND TECHNOLOGY - Ebook written by NANDITA DASGUPTA, AMITAVA DASGUPTA. Read this book using Google Play Books app on your PC, android, iOS devices. Download for offline reading, highlight, bookmark or take notes while you read SEMICONDUCTOR DEVICES: MODELLING AND TECHNOLOGY.5/5(6). ISBN: OCLC Number: Notes: "Part of a two-conference program held at SPIE's International Conference on Physical Concepts of Materials for Novel Optoelectronic Device Applications, 28 October-2 November , in Aachen, Federal Republic of Germany"--Page xiv. Lead salt thin film semiconductors for microelectronic applications 79 where A is the input wave amplitude, T is the half width, ω is the angular frequency, t0 is the time offset.

  Towards optoelectronic detection of explosives; magnetoconcentration and Dember infrared detectors” in Narrow-Gap II–VI Compounds and Electromagnetic Applications, pp. –, edited by P. Capper, Chapman & Hall, London, Opto-Electronics Review, Vol Cited by: on II-VI Compounds and Related Materials september Conference book (narrow) gap between the natural vibration frequenc ies of the constituent bonds, with concomitant impact on the magnitude of the Int.-PP dispersion. The discussion is supported by a Raman symm etry analysis of the ZnBeSe - and ZnSeS -like Int-PP V both in. The proceedings provided the latest research in III-V, II-VI, and IV-IV compounds. The papers discuss research trends in quantum structures, and report progress in the development of zinc oxide and spintronics, III-V based electronic and optoelectronic devices. Narrow Gap Semiconductors Chapter 2: II-VI Characterization Luminescence and optical gain from free, localized and confined excitons in narrow-gap Hgo.7Cdo.3Te J W Tomm, T Kelz, W Hoerstel, T К Tran, В К Wagner, R G Benz II and Electronic and optoelectronic devices in narrow-gap semiconductors T Ashley

Chapter 15 Narrow Bandgap II-VI Semiconductors: Growth Altmetric Badge. Chapter 16 Wide-Bandgap II-VI Semiconductors: Chapter 23 Temperature-Insensitive Band-Gap III-V Semiconductors: Tl-III-V and III-V-Bi Altmetric Badge. Overall attention for this book and its chapters Altmetric Badge. Mentioned by news 1 news outlet twitter Read "II-VI Semiconductor Materials and their Applications" by MariaC. Tamargo available from Rakuten Kobo. II-VI Semiconductor Materials and Their Applications deals with II-VI compound semiconductors and the status of the two Brand: CRC Press.

Narrow Gap II-VI Compounds for Optoelectronic and by Peter Capper Download PDF EPUB FB2

The field of narrow-gap II-VI materials is dominated by lhe compound mercury cadmium telluride, MCT or Hg1_. Cd. By varying the x value, material can be made to cover all the important infrared (lR) ranges of interest. It is probably true to say that MCT Narrow Gap II-VI Compounds for Optoelectronic and book the third most studied.

The field of narrow-gap II-VI materials is dominated by lhe compound mercury cadmium telluride, MCT or Hg1_. This book is intended for readers who are either new to the field or are experienced workers in the field who need a comprehensive and up to date view of this rapidly expanding area.

Narrow Gap II-VI Compounds for Optoelectronic and Electromagnetic Applications is organised in three main sections. The first covers the growth of materials from the earliest, though still used, bulk techniques, through to the more recent epitaxial techniques, based on both liquid and gas phases, and includes the exciting new area of low Book Edition: K.

Durose, in: P. Capper (Ed.), Narrow-gap II–VI Compounds for optoelectronic and Electromagnetic Applications (Electronic Materials Series vol. 3), Chapman and Hall, London, (Review of the systematic behaviour of extended defects in narrow gap II–VI semiconductors). Narrow Gap II-VI Compounds for Optoelectronic and Electromagnetic Applications, edited by Peter Capper Chapman and Hall, Electronic Materials Series, Volume 3,ISBNPages.

Price £ (Reviewed in Journal of Infrared Physics and Technology pp) Review This book, comprising twenty chapters by no less than thirty-two authors, is without a doubt one of the Author: H.N.

Rutt. The field of narrow-gap II-VI materials is dominated by lhe compound mercury cadmium telluride, MCT or Hg1_. Cd. By varying the x value, material can be made to cover all the important infrared (lR) ranges of interest.

It is probably true to say that MCT is the third most studied semiconductor after silicon and gallium arsenide. As current epitaxial layers of MCT are mainly grown on.

Narrow Gap II-VI Compounds for Optoelectronic and Electromagnetic Applications, edited by Peter Capper Chapman and Hall, Electronic Materials Series, Volume 3,ISBNPages. Price £Author: H.N.

Rutt. This book is intended for readers desiring a comprehensive analysis of the latest developments in widegap II-VI materials research for opto-electronic applications and basic insight into the fundamental underlying principles. Therefore, it is hoped that this book will serve two purposes.

Semiconductor heterostructures of II-VI compounds offer a wide range of properties which can be. exploited for fundamental studies and for device applications.

We will review recent studies addressing. these issues, emphasizing ZnSe-based structures for blue-green light emitting devices. Other systems,Author: Mool C. Gupta, John Ballato. Most experimental results on the maximum doping levels obtained in wide gap II–VI materials can be explained by a model that assumes a pinning of the Fermi level at a fixed position with respect to the vacuum level.

In the case of n-type doping, this position is about meV above the ZnSe conduction band edge for nearly all II–VI compounds.

♥ Book Title: Compensation Systems for Low Temperature Applications ♣ Name Author: Balzej T. Skoczen ∞ Launching: Info ISBN Link: ⊗ Detail ISBN code: ⊕ Number Pages: Total sheet ♮ News id: pzvvCAAAQBAJ Download File Start Reading ☯ Full Synopsis: "The present monograph is mainly focused on the behaviour of ductile ma terials at.

Abstract. The field of narrow-gap II–VI materials is dominated by the compound semiconductor mercury cadmium telluride, (Hg 1–x Cd x Te or MCT), which supports a large industry in infrared detectors, cameras and infrared systems.

It is probably true to say that HgCdTe is the third most studied semiconductor after silicon and gallium arsenide.

A valuable, timely book for the crystal growth community, edited by one of the most respected members in the field. Contents cover all the important materials from silicon through the III-V and II-IV compounds to oxides, nitrides, fluorides, carbides and diamonds International group of contributors from academia and industry provide a balanced treatment Includes global interest with particular.

The main purpose of this chapter is to describe the applications and technology of II–VI narrow bandgap semiconductors, focussing on HgCdTe for infrared sensors. In this monograph, investigations of the performance of narrow-gap semiconductor photodiodes are presented, and recent progress in different IR photodiode technologies is discussed: HgCdTe photodiodes, InSb photodiodes, alternatives to HgCdTe III-V and II-VI ternary alloy photodiodes, lead chalcogenide photodiodes, and a new class of photodiodes based on two-dimensional solids.

A compound semiconductor is a semiconductor compound composed of chemical elements of at least two different species. These semiconductors typically form in periodic table groups 13–15 (old groups III–V), for example of elements from the Boron group (old group III, boron, aluminium, gallium, indium) and from group 15 (old group V, nitrogen, phosphorus, arsenic, antimony, bismuth).

Moreover, on account of their unique capability of behaving as both wide-bandgap (– eV) and narrow-bandgap (0– eV) materials, II–VI compounds are utilized in applications such as. Buy peter capper Books at Shop amongst our popular books, includ Mercury Cadmium Telluride, Liquid Phase Epitaxy of Electronic, Optical and Optoelectronic Materials and more from peter capper.

Free shipping and pickup in store on eligible orders. Moreover, on account of their unique capability of behaving as both wide-bandgap (– eV) and narrow-bandgap (0– eV) materials, II–VI compounds are utilized in applications such as photoconductors, ultrasonic transducers, and Hall effect : Bindu Krishnan, Sadasivan Shaji, M.

Acosta-Enríquez, E. Acosta-Enríquez, R. Castillo-Ortega, M. Narrow-gap II-VI Compounds for Optoelectronic and Electromagnetic The field of narrow-gap II-VI materials is dominated by lhe compound mercury cadmium telluride, MCT or Hg1_. : Peter Borm.

During the last 25 years (after the growth of the first pseudomorphic GeSi strained layers on Si by Erich Kasper in Germany) we have seen a steady accu- mulation of new materials and devices with enhanced performance made pos- sible by strain.

have been very good years for the strained-Iayer- devices. This book deals with the Effective Electron Mass (EEM) in low dimensional semiconductors.

The materials considered are quantum confined non-linear optical, III-V, II-VI, GaP, Ge, PtSb2, zero-gap, stressed, Bismuth, carbon nanotubes, GaSb, IV-VI, Te, II-V, Bi2Te3, Sb, III-V, II-VI, IV-VI semiconductors and quantized III-V, II-VI, IV-VI and HgTe/CdTe superlattices with graded interfaces and 5/5(1).

For those currently in the field the book can be used as a collection of useful data, as a guide to the literature and as an overview of topics covering the wide range of work areas.

Books > Materials Science. Narrow-gap II-VI Compounds For Optoelectronic And Electromagnetic Applications. II-VI compound semiconductor II-VI compound semiconductor such as Zn and Cd-chalcogenides such as compounds with oxygen O, S, Se, and tellurium Te cover a wide range of electronic and optical properties due to the wide variations in their energy Size: KB.

Narrow-gap semiconductors are semiconducting materials with a band gap that is comparatively small compared to that of silicon, i.e. smaller than eV at room are used as infrared detectors or thermoelectrics.

List of narrow-gap semiconductors. Synopsis. The crystal structure of the wurtzite-derived β-CuGaO 2 was refined by Rietveld analysis and is discussed in comparison with the other I−III−VI 2 and II−VI oxide semiconductors. The direct band gap of the β-CuGaO 2, unlike β-Ag(Ga,Al)O 2, is explained by small cation and oxygen tetrahedral β-CuGaO 2 is a metastable phase but is practically stable at Cited by: Properties of Wide Bandgap II-VI Semiconductors Bhargava, Rameshwar(eds.) Semiconductors comprising elements from groups II and VI of the periodic table and having a large energy gap (e.g.

ZnSe) are generating intense R&D activity world-wide largely as a result of their blue green diodes. @article{osti_, title = {Long-wavelength semiconductor devices, materials, and processes}, author = {Katz, A.

and Malik, R.J. and Biefeld, R.M. and Gunshor, R.L.}, abstractNote = {The symposium was directed as an overview of devices, materials and material processes having application for long-wavelength detectors and sources for fiber optics communication systems and thermal imaging.

The book also presents new directions that have potential, future applications in optoelectronics for II-VI materials. In particular, it discusses the status of dilute magnetic semiconductors for mango-optical and electromagnetic devices, nonlinear optical properties, photorefractive effects and new materials and physics phenomena, such as self.

used as substrates for a wide variety of electronic and optoelectronic devices such as light-emitting devices. II-VI compound semiconductor such as Zn and Cd-chalcogenides such as compounds with oxygen O, S, Se, and tellurium Te cover a wide range of electronic and optical properties due to the wide variations in their energy band-gap.

Compound Semiconductors was the 31st Symposium in this distinguished international series, held at Hoam Convention Center of Seoul National University, Seoul, Korea from September 12 to Septem It attracted over submissions from leading scientists in academic and industrial rese.Novel narrow-gap semiconductor systems R.

A. Stradling Proc. SPIEPhysical Concepts of Materials for Novel Optoelectronic Device Applications I: Materials Growth and Characterization, pg (1 March ); doi: /Nanoparticles of wide band gap II-VI compounds doped with transition metal (TM) or rare earth (RE) ions are perspective phosphor materials and fluorescence labels for optoelectronic, biology and medical applications.

The efficiency of 3d-3d and 4f-4f intra-shell transitions is shown to be enhanced in TM, RE doped nanoparticles. Two mechanisms of emission enhancement related to spin dependent Cited by: 4.